Analog-to-digital converter for separately applying a bias voltage depending on an operation mode, and an image sensor including the same

ABSTRACT

An image sensor supporting a full resolution mode and a crop mode, the image sensor including: a pixel array including a plurality of pixels configured to generate a pixel signal by sensing an object; an analog-to-digital converter configured to convert the pixel signal into a digital signal and including a plurality of metal lines; a bias generator configured to apply a bias voltage to the plurality of metal lines; and a bias controller including: a first transistor configured to activate all of the plurality of metal lines based on a first control signal; and a second transistor configured to activate a first metal line for the crop mode among the plurality of metal lines based on a second control signal.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2021-0053755, filed on Apr. 26, 2021, in the KoreanIntellectual Property Office, the disclosure of which is incorporated byreference herein in its entirety.

TECHNICAL FIELD

The inventive concept relates to a complementary metal-oxidesemiconductor (CMOS) image sensor, and more particularly, to ananalog-to-digital converter that separately applies a bias voltagedepending on an operation mode, and an image sensor including the same.

DISCUSSION OF RELATED ART

An image sensor is a sensor that detects and conveys information used tomake an image. A complementary metal oxide semiconductor (CMOS) imagesensor is one of two main types of electronic image sensors. In the CMOSimage sensor, correlated double sampling (CDS) is used to remove pixelreset noise. To increase the performance of an image sensor, ananalog-to-digital converter (ADC) may be used in conjunction with theCDS method.

The ADC may include a power-down switch to reduce power when the ADC isnot used for sensing. However, the power-down switch may induce its ownon-resistance and cause the input range of the amplifier to vary.

SUMMARY

An example embodiment of the inventive concept provides an image sensorthat does not include a separate power-down switch by separatelyapplying a bias voltage depending on an operation mode.

According to an example embodiment of the inventive concept, there isprovided an image sensor supporting a full resolution mode and a cropmode, the image sensor including: a pixel array including a plurality ofpixels configured to generate a pixel signal by sensing an object; ananalog-to-digital converter configured to convert the pixel signal intoa digital signal and including a plurality of metal lines; a biasgenerator configured to apply a bias voltage to the plurality of metallines; and a bias controller including: a first transistor configured toactivate all of the plurality of metal lines based on a first controlsignal; and a second transistor configured to activate a first metalline for the crop mode among the plurality of metal lines based on asecond control signal.

According to an example embodiment of the inventive concept, there isprovided an analog-to-digital converter configured to convert a pixelsignal sensed at a pixel into a digital signal, the analog-to-digitalconverter including: a comparator including a first metal line and asecond metal line that are activated depending on a bias voltage, thecomparator being configured to generate a comparison signal by comparingthe pixel signal with a ramp signal based on the bias voltage; a counterconfigured to generate a digital signal by counting the comparisonsignal based on a clock signal; and a first transistor and a secondtransistor configured to determine a path of the bias voltage applied tothe first metal line and the second metal line.

According to an example embodiment of the inventive concept, there isprovided an image sensor supporting a full resolution mode and a cropmode, the image sensor including: a pixel array including a plurality ofpixels configured to generate a pixel signal by sensing an object; ananalog-to-digital converting array including a plurality ofanalog-to-digital converters each configured to convert the pixel signalinto a digital signal, the analog-to-digital converting array includinga plurality of metal lines commonly connected to the plurality ofanalog-to-digital converters; a bias generator configured to apply abias voltage to the plurality of metal lines; and a bias controllerincluding a first transistor configured to activate all of the pluralityof metal lines based on a first control signal; a second transistorconfigured to activate a first metal line for the crop mode among theplurality of metal lines based on a second control signal; and an outputbuffer configured to output the digital signal.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concept will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a block diagram illustrating an image sensor according to anexample embodiment of the inventive concept;

FIG. 2 is a circuit diagram illustrating a pixel according to an exampleembodiment of the inventive concept;

FIG. 3 is a diagram schematically illustrating an analog-to-digitalconverting array according to an example embodiment of the inventiveconcept;

FIG. 4A is a circuit diagram of an amplifier as a comparative example,and FIG. 4B is a circuit diagram illustrating an amplifier according toan example embodiment of the inventive concept;

FIGS. 5A, 5B and 5C are diagrams schematically illustrating a pluralityof metal lines, a bias generator, and a plurality of transistorsaccording to an example embodiment of the inventive concept;

FIGS. 6A, 6B and 6C are diagrams schematically illustrating a pluralityof metal lines, a bias generator, and a plurality of transistorsaccording to an example embodiment of the inventive concept, and FIG. 6Dis a table showing signal levels according to an operation mode of ananalog-to-digital converter according to an example embodiment of theinventive concept;

FIG. 7A is a diagram illustrating a pixel array in a crop mode accordingto an example embodiment of the inventive concept, and FIG. 7B is adiagram for explaining image processing according to an exampleembodiment of the inventive concept;

FIG. 8 is a block diagram of an electronic device including amulti-camera module according to an example embodiment of the inventiveconcept; and

FIG. 9 is a detailed block diagram of the camera module of FIG. 8according to an example embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, example embodiments of the inventive concept will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a block diagram illustrating an image sensor 100 according toan example embodiment of the inventive concept.

Referring to FIG. 1, the image sensor 100 may be mounted on anelectronic device capable of sensing an image or light. For example, theimage sensor 100 may be mounted in an electronic device such as acamera, a smartphone, a wearable device, an internet of things (IoT)object, a tablet personal computer (PC), a personal digital assistant(PDA), a portable multimedia player (PMP), a navigation device, etc. Inaddition, the image sensor 100 may be mounted in an electronic deviceprovided as a component in a vehicle, furniture, manufacturingequipment, a door, various measurement devices, and the like.

The image sensor 100 may convert an optical signal of an object incidentthrough an optical lens into an electrical signal, and convert theelectrical signal into image data IDTA. The image sensor 100 mayinclude, for example, a pixel array 110 including a plurality oftwo-dimensionally arranged pixels and various electrical circuits forsensing. The image sensor 100 may be implemented as a semiconductor chipincluding the pixel array 110 and a sensing circuit.

The image sensor 100 may include the pixel array 110, a row driver 120,an analog-to-digital converting (ADC) array 130 including ananalog-to-digital converter (hereinafter referred to as ADC) 131, a biasgenerator 140, a bias controller 150, a ramp generator 160, and a clockgenerator 170, a column decoder 180, an output buffer 190, and a controllogic 195.

The pixel array 110 may convert received optical signals into electricalsignals. The pixel array 110 may include a plurality of pixels 111 eachconnected to a plurality of row lines and a plurality of column linesCOL and arranged in a matrix form. Each of the plurality of pixels 111may include a photoelectric conversion element. For example, the pixel111 may be implemented as a photoelectric conversion element such as acharge coupled device (CCD) or a complementary metal oxide semiconductor(CMOS), and may be implemented with various types of photoelectricconversion elements. For example, the photoelectric conversion elementmay include a photodiode, a phototransistor, a photogate, or a pinnedphotodiode. Each of the plurality of pixels 111 may include at least onephotoelectric conversion element, and the plurality of photoelectricconversion elements may be stacked on each other.

The plurality of pixels 111 may sense light using a photoelectricconversion element and convert the sensed light into a pixel signal PS,which is an electrical signal. The pixel signal PS may include a resetsignal generated based on a reset operation of each of the plurality ofpixels 111, and may include an image signal based on a photo sensingoperation of each of the plurality of pixels 111. In other words, thepixel signal PS may include both of the reset signal and the imagesignal.

Each of the plurality of pixels 111 may detect light in a specificspectrum range. For example, the plurality of pixels 111 may include redpixels for converting light in a red spectrum range into an electricalsignal, green pixels for converting light in a green spectrum range intoan electrical signal, and blue pixels for converting light in a bluespectrum range into an electrical signal. A color filter fortransmitting light in a specific spectral range may be disposed on eachof the plurality of pixels 111. As another example, the plurality ofpixels 111 may include a cyan pixel, a yellow pixel, a magenta pixel, ora white pixel.

A micro lens and a color filter may be stacked on each of the pluralityof pixels 111, and the plurality of color filters of the plurality ofpixels 111 may constitute a color filter array. The color filter maytransmit light of a specific color among light incident through themicrolens, that is, a wavelength of a specific color region. A colordetectable by the pixel 111 may be determined based on a color filterprovided in the pixel 111. However, the inventive concept is not limitedthereto, and in an embodiment, and in an embodiment, the photoelectricconversion element provided in the pixel 111 may convert lightcorresponding to the wavelength of the color region into an electricsignal depending on the level of the applied electric signal, forexample, the voltage level, and accordingly, a color detectable by thepixel 111 may be determined depending on the level of the electricsignal applied to the photoelectric conversion element.

In an example embodiment, each of the plurality of pixels 111 may sensean object using at least two photoelectric conversion elements. Forexample, each of the plurality of pixels 111 may include at least onefirst photoelectric conversion element disposed in a left direction (oran upward direction) with respect to the optical axis of the micro lensand at least one second photoelectric conversion element disposed in aright direction (or a downward direction) with respect to the opticalaxis of the micro lens. Each of the plurality of pixels 111 may output afirst image signal generated from the first photoelectric conversionelement or a second image signal generated from the second photoelectricconversion element. One pixel 111 of two pixels 111 arranged indifferent adjacent rows and the same column may output the first imagesignal generated from the first photoelectric conversion element, andthe other pixel 111 of the two pixels 111 may output the second imagesignal generated from the second photoelectric conversion element. Inthis case, the two pixels 111 may detect the same color. Based on thefirst image signal and the second image signal output from the twopixels 111, auto-focusing data used for a phase difference calculationfor an auto-focusing function, for example, a phase detection signalpair, may be generated. In addition, the pixel 111 may output a sumimage signal generated from the at least one first photoelectricconversion element and the at least one second photoelectric conversionelement as the pixel signal PS. The sum image signal may be used togenerate an image in units of frames.

The row driver 120 may drive the pixel array 110 in units of rows. Therow driver 120 may decode a row control signal CTR_R generated by thecontrol logic 195 and select at least one row line from among row linesconstituting the pixel array 110 in response to the decoded row controlsignal. For example, the row control signal CTR_R may include an addresssignal or a command indicating address information. In an exampleembodiment of the inventive concept, the row driver 120 may generate arow select signal. The pixel array 110 may output the pixel signal PSfrom a row selected by the row select signal provided from the rowdriver 120 through a column line COL. In other words, the plurality ofpixels 111 of the pixel array 110 may sequentially output pixel signalsin row units.

The analog-to-digital converting array 130 may convert the pixel signalPS, which is an analog signal input from the pixel array 110, into adigital value. The analog-to-digital converting array 130 may include aplurality of ADCs 131 arranged in a column direction to process thepixel signal PS provided through the column line COL.

In an example embodiment of the inventive concept, the analog-to-digitalconverting array 130 may be referred to as a correlated double samplingcircuit. The pixel signals PS output from the plurality of pixels 111may have a deviation due to a characteristic of each pixel, for example,column fixed pattern noise (CFPN) and/or a deviation due to a differencein characteristics of logic for outputting the pixel signal from thepixel 111. To compensate for the deviation between these pixel signalsPS, correlated double sampling involves: obtaining a reset component (ora reset signal) and an image component (or an image signal) for each ofthe pixel signals PS; and extracting the difference between the resetcomponent and the image component as an effective signal component.

The analog-to-digital converting array 130 may receive a bias controlsignal BCS generated by the bias controller 150, a ramp signal RSgenerated by the ramp generator 160, and a counter clock signal CLKgenerated by the clock generator 170. The ADC 131 may convert the pixelsignal PS, which is an analog signal, into a digital value based on thebias control signal BCS, the ramp signal RS, and the counter clocksignal CLK.

According to an example embodiment of the inventive concept, the ADC 131may activate at least some of the column lines COL based on the biascontrol signal BCS, and generate a comparison signal by comparing thepixel signal PS output from the pixel 111 connected to the activatedcolumn line COL with the ramp signal RS and amplifying the comparisonresult. According to an example embodiment of the inventive concept, theADC 131 may convert the comparison signal into a digital signal based onthe counter clock signal CLK. The ADC 131 will be described in moredetail in FIG. 3.

The bias generator 140 may operate based on a bias control signal CTR_Bprovided from the control logic 195. The bias generator 140 may generatea bias voltage required to amplify the pixel signal PS and provide thegenerated bias voltage to the analog-to-digital converting array 130.The bias controller 150 may determine a path of the bias voltageprovided to the analog-to-digital converting array 130. The bias voltagemay be commonly required for the plurality of ADCs 131 depending on theoperation mode, and the bias controller 150 may activate at least someof the plurality of column lines COL by determining a path such that abias voltage is commonly provided to the plurality of ADCs 131 arrangedin parallel.

The ramp generator 160 may operate based on a ramp control signal CTR_RPprovided from the control logic 195. The ramp control signal CTR_RP mayinclude a ramp enable signal. When the ramp enable signal is activated,the ramp generator 160 may generate a ramp signal RS having a slope. Theramp signal RS is a signal that gradually rises or falls with a constantmagnitude. The ramp signal RS may include a reset ramping period forreset and a signal ramping period for sensing a signal. For example,when the ramp signal RS is used for correlated double sampling (CDS),the ramp signal RS may sequentially have a reset ramping period and asignal ramping period.

According to an example embodiment of the inventive concept, the rampgenerator 160 may generate the ramp signal RS having a specific slope, aramping time, a ramping start voltage level, and/or a ramping endvoltage level in response to the ramp control signal CTR_RP. Forexample, the ramp generator 160 may generate a ramp signal decreasingwith a constant slope, or may generate a reverse ramp signal increasingwith a constant slope.

The clock generator 170 may operate based on a clock control signalCTR_CK provided from the control logic 195. The clock generator 170 maygenerate a counting clock signal CLK to be provided to theanalog-to-digital converting array 130. The generation timing andfrequency of the counting clock signal (LK may be controlled by thecontrol logic 195. In an example embodiment of the inventive concept,the clock generator 170 may be implemented as a gray code generator. Theclock generator 170 may generate a plurality of code values having aresolution depending on the number of bits set as the counting clocksignal CLK. For example, when a 10-bit code is set, the clock generator170 may generate the counting clock signal CLK including 1024 codevalues, and when an 11-bit code is set, the clock generator 170 maygenerate a counting clock signal CLK including 2048 code values.

The output buffer 190 may temporarily store the digital signal outputfrom the analog-to-digital converting array 130, and then, sense thedigital signal, amplify the sensed digital signal, and output theamplified digital signal. The output buffer 190 may further include acolumn memory and a sense amplifier. The column memory may temporarilystore digital signals output from each of the plurality of ADCs 131 andoutput the digital signals to the sense amplifier, and the senseamplifier may sense and amplify digital signals output from the columnmemories. The sense amplifier may output the amplified digital signalsas image data IDTA.

As mentioned above, the column memory is included in the output buffer190, but the inventive concept is not limited thereto. For example, thecolumn memory may be included in the analog-to-digital converting array130 in the form of a latch. In addition, the column memory may beimplemented as a static random access memory (SRAM), a latch, aflip-flop, or a combination thereof, but is not limited thereto.

The column decoder 180 may operate based on a column control signalCTR_C provided from the control logic 195. The column decoder 180 maycontrol the output timing of the pixel value stored in the output buffer190 depending on the column control signal CTR_C. The column decoder 180may select a specific column line from among the plurality of columnlines COL by decoding the column control signal CTR_C. The columndecoder 180 may externally provide image data IDTA corresponding to theselected column line COL and temporarily stored in the memory of theoutput buffer 190.

The control logic 195 may control the image sensor 100 by generatingvarious control signals. According to an example embodiment of theinventive concept, the control logic 195 may generate the row controlsignal CTR_R for controlling the row driver 120, the bias control signalCTR_B for controlling the bias generator 140, the ramp control signalCTR_RP for controlling the ramp generator 160, the clock control signalCTR_CK for controlling the clock generator 170, and the column controlsignal CTR_C for controlling the column decoder 180. For example, thecontrol logic 195 may adjust an application time, an application rate, aslope, a start voltage level, and/or an end voltage level of a biassignal BS, the ramp signal RS, and the counter clock signal CLK bydetermining a timing, level, amplitude, duty ratio, and application timeof the row control signal CTR_R, the bias control signal CTR_B, the rampcontrol signal CTR_RP, the clock control signal CTR_CK, and/or thecolumn control signal CTR_C.

The control logic 195 may interpret an externally provided command andadjust various control signals, for example, the row control signalCTR_R, the bias control signal CTR_B, the ramp control signal CTR_RP,the clock control signal CTR_CK, and/or the column control signal CTR_Cto correspond to the command. According to an example embodiment of theinventive concept, when the central processing unit (e.g., anapplication processor) of the electronic device including the imagesensor 100 determines the operation mode of the image sensor 100, thecontrol logic 195 may control functional units of the image sensor 100to correspond to the determined operation mode. For example, the imagesensor 100 may support a full resolution mode and a crop mode. In otherwords, the image sensor 100 may support a first mode and a second mode.When the application processor commands the operation mode to be changedto the crop mode, the control logic 195 may adjust the row controlsignal CTR_R, the bias control signal CTR_B, the ramp control signalCTR_RP, the clock control signal CTR_CK, and/or the column controlsignal CTR_C to correspond to the crop mode.

The control logic 195 may be implemented as a central processing unit(CPU), an arithmetic logic unit (ALU) that performs arithmetic andlogical operations, bit shifters, and the like, a digital signalprocessor (DSP), a microprocessor, an application specific integratedcircuit (ASIC), a control logic, or the like, but is not limitedthereto. In some embodiments of the inventive concept, the control logic195 may include a state machine composed of a plurality of logic gates,and may include a processor and a memory that stores instructions to beexecuted by the processor.

FIG. 2 is a circuit diagram illustrating a pixel 111 according to anexample embodiment of the inventive concept. FIG. 1 is referred totogether with FIG. 2.

Referring to FIG. 2, the pixel 111 may include a photodiode PD, atransfer transistor TX, a floating diffusion node FD, a reset transistorRX, a driving transistor DX, and a selection transistor SX. However, theinventive concept is not limited thereto, and the photodiode PD may bereplaced with another photoelectric conversion element.

Each of a reset control signal RS provided to the gate electrode of thereset transistor RX, a transfer control signal TS provided to the gateelectrode of the transfer transistor TX, and a selection control signalSEL provided to the gate electrode of the select transistor SX may beprovided by the row driver 120 according to the row control signal CTR_Rgenerated by the control logic 195 (shown in FIG. 1).

The photodiode PD may generate photocharges that vary depending on theintensity of the incident light. For example, when the photodiode PD isa P-N junction diode, the photodiode PD may generate charges, e.g.,electrons which are negative charges and holes which are positivecharges, in proportion to the amount of incident light. The photodiodePD is an example of a photoelectric conversion element, and may be atleast one of a phototransistor, a photo gate, a pinned photodiode (PPD),and a combination thereof.

The floating diffusion node FD, which may be referred to as a floatingdiffusion region, may be formed between the transfer transistor TX, thereset transistor RX, and the driving transistor DX. The transfertransistor TX may transfer the photocharge to the floating diffusionnode FD according to the transfer control signal TS output from the rowdriver 120 in FIG. 1. According to an example embodiment of theinventive concept, the floating diffusion node FD may operate as acapacitor. When the transfer transistor TX is turned on in response tothe transfer control signal TS applied to the gate terminal of thetransfer transistor TX, charges generated by the photodiode PD (e.g.,photocharges) may be transmitted to the floating diffusion node FD, andmay be stored in the floating diffusion node FD.

The driving transistor DX may amplify photocharges according to apotential corresponding to the amount of photocharges accumulated in thefloating diffusion node FD and transmit the amplified photocharges tothe selection transistor SX. A drain electrode of the selectiontransistor SX is connected to a source of the driving transistor DX, anda pixel signal PS may be transmitted to the column line COL connected tothe pixel 111 according to the selection signal SEL output from the rowdriver 120. The reset transistor RX may reset the floating diffusionnode FD to a power supply voltage VDD level according to the resetcontrol signal RS provided from the row driver 120.

The reset transistor RX may periodically reset charges accumulated inthe floating diffusion node FD. A source electrode of the resettransistor RX may be connected to the floating diffusion node FD, and adrain electrode of the reset transistor RX may be connected to the powersupply voltage VDD. When the reset transistor RX is turned on inresponse to the reset control signal RS applied to the gate electrode ofthe reset transistor RX, the power supply voltage VDD connected to thedrain electrode of the reset transistor RX is transferred to thefloating diffusion node FD. When the reset transistor RX is turned on,charges accumulated in the floating diffusion node FD may be dischargedto reset the floating diffusion node FD.

The driving transistor DX may operate as a source follower. The drivingtransistor DX may receive a signal having the amount of charge of thefloating diffusion node FD, in other words, the potential of thefloating diffusion node FD, through the gate electrode of the drivingtransistor DX, and buffer the received signal to output the signal tothe selection transistor SX. The selection transistor SX may be turnedon in response to the selection signal SEL applied to the gate electrodeof the selection transistor SX, and when the selection transistor SX isturned on, the buffered signal output from the driving transistor DX maybe output as the pixel signal PS through the column line COL.

In FIG. 2, although the pixel 111 is illustrated as having a4-transistor (4-T) structure including one photodiode PD and fourtransistors TX, RX, DX, and SX, each of the plurality of pixels 111included in the image sensor according to an example embodiment of theinventive concept is not limited to the structure of FIG. 2. The pixel111 may be a pixel having a three-transistor (3T) structure, may includea photodiode (PD), and include three transistors selected from atransfer transistor TX, a reset transistor RX, a driving transistor DX,and a selection transistor SX.

FIG. 3 is a diagram schematically illustrating an analog-to-digitalconverting array 130 according to an example embodiment of the inventiveconcept. FIG. 1 is referred to together with FIG. 3.

Referring to FIG. 3, the analog-to-digital converting array 130 mayinclude a plurality of ADCs 131, and a bias voltage V_(BIAS) included inthe bias signal (FIG. 1, BS), a ramp voltage V_(RAMP) included in theramp signal (FIG. 1, RS), and the counter clock signal CLK may becommonly provided to each of the ADCs 131.

According to an example embodiment of the inventive concept, the ADC 131may include a comparator 210 and a counter 230. The comparator 210 maybe electrically connected to the bias generator 140 and the biascontroller 150.

In the present embodiment, for convenience of explanation, it isillustrated that the comparator 210 compares the pixel signal PS withthe ramp signal (FIG. 1, RS) and amplifies the comparison result togenerate a comparison signal COMP, but the inventive concept is notlimited thereto. For example, it will be understood that the ADC 131 mayinclude a comparator generating a comparison signal as a result of thecomparator 210 receiving the pixel signal PS and an amplifier amplifyingthe comparison signal, respectively.

According to an example embodiment of the inventive concept, thecomparator 210 may include a plurality of metal lines. The plurality ofmetal lines may be separately provided for various operation modessupported by the image sensor 100 (shown in FIG. 1). For example, thecomparator 210 may include a first metal line for imaging an object in afull resolution mode, and may include a second metal line for imaging anobject in a crop mode. In an example embodiment of the inventiveconcept, the crop mode is an operation mode for imaging only a part ofan imagable area of an object, not an entire imagable object. Theoperation of the comparator 210 in a particular operation mode of theimage sensor 100 may be determined based on the activation of at leastone of the metal lines (e.g., application of the bias voltage V_(BIAS)).

In an example embodiment of the inventive concept, the plurality ofmetal lines may be disposed over or under the analog-to-digitalconverting array 130. In an example embodiment of the inventive concept,the plurality of metal lines may be disposed under the comparator 210,and the bias voltage V_(BIAS) may be commonly provided to the pluralityof comparators 210 included in the analog-to-digital converting array130 through the plurality of metal lines. In the present embodiment, itmay be understood that the comparator 210 connected to the metal line towhich the bias voltage V_(BIAS) is applied has been activated. In otherwords, when a metal line is applied with the bias voltage V_(BIAS), thecomparator 210 connected to the metal line is activated. According to anexample embodiment of the inventive concept, the bias voltage V_(BIAS)may be applied to at least one of the plurality of metal lines, and byactivating the comparator 210 connected to the metal line to which thevoltage is applied, the pixel signal PS may be compared, amplified, orinverted. The bias controller 150 may control whether the comparator 210is activated by determining a path of the bias voltage V_(BIAS).Activation of the comparator 210 will be described with reference toFIGS. 5A to 5C and FIGS. 6A to 6C.

The comparator 210 may compare the pixel signal PS with the ramp voltageV_(RAMP) and amplify or invert the comparison result. The comparator 210may amplify the pixel signal PS to a voltage level suitable foranalog-to-digital conversion, when the pixel signal PS is output fromthe pixel 111 (shown in FIG. 1) connected to any one of the column linesCOL (shown in FIG. 1) based on the bias voltage V_(BIAS). When the levelof the ramp voltage V_(RAMP) is equal to the level of the amplifiedsignal, the comparator 210 may output the comparison signal COMP thattransitions from a first logic level, for example, logic high, to asecond logic level, for example, logic low. A time at which the level ofthe comparison signal COMP is transitioned may be determined dependingon the level of the pixel signal PS.

The comparator 210 may include a differential amplifier, which may beimplemented as an operational transconductance amplifier (OTA), anoperational amplifier, or the like. A ramp voltage V_(RAMP) and a pixelsignal PS may be received as an input signal (FIGS. 4A and 4B, INP) atan input terminal of the comparator 210. For example, a pixel signal PSmay be input to a negative input terminal of the comparator 210, and aramp voltage V_(RAMP) may be input to a positive input terminal of thecomparator 210, respectively. The comparator 210 may compare the pixelsignal PS to the ramp voltage V_(RAMP), and output the comparisonoperation result as the comparison signal COMP through an outputterminal.

The ADC 131 may also include a limiting circuit. The limiting circuitmay be connected to an output terminal of the comparator 210 and limitthe voltage of the output terminal, in other words, the level of thecomparison signal COMP. The limiting circuit may limit the level of thecomparison signal COMP not to decrease below a specific level byproviding a current to the output terminal. Accordingly, in thecomparator 210, it is possible to prevent a drain/source voltage of thetransistor to which the pixel signal PS is input from being reducedbelow a certain level, and column fixed pattern noise (CFPN) generateddue to the trap charge may be prevented.

Each of the plurality of counters 230 may be connected to the outputterminal of the comparators 210 to count each comparison signal COMP.For example, the control logic 195 (shown in FIG. 1) may generate acounter clock signal and a counter reset signal for controlling a resetoperation of the plurality of counters 230, and a counter control signalincluding an inversion signal for inverting an internal bit of each ofthe plurality of counters 230.

Each of the plurality of counters 230 may count the level transitiontime of the comparison signal output from the comparator 210corresponding to the same column based on the counting clock signal CLK,and output the counting value as a digital signal DS. The counter 230may transmit the digital signal DS to the output buffer 190 of FIG. 1.

In an example embodiment of the inventive concept, the counter 230 mayinclude a latch circuit and an operation circuit. The latch circuit maylatch a code value received as the counting clock signal CLK when thelevel of the comparison signal received from the comparator 210 istransitioned. The latch circuit may latch each of a code valuecorresponding to the reset signal, for example, a reset value, and acode value corresponding to the image signal, for example, an imagesignal value. The operation circuit may generate an image signal valuefrom which the reset level of the pixel 111 is removed by calculatingthe reset value and the image signal value. The counter 230 may outputthe image signal value from which the reset level is removed as a pixelvalue. However, the inventive concept is not limited thereto, and thecounter 230 may be implemented as an up-counter that sequentiallyincreases a count value based on the counting clock signal CLK and anoperation circuit, or an up/down counter, or a bit-wise inversioncounter. In this case, the bit-wise inversion counter may perform anoperation similar to the up/down counter. For example, the bit-wiseinversion counter may perform a function of only up-counting and afunction of making one's complement by inverting all bits inside thecounter when a specific signal is input thereto. The bit-wise inversioncounter may perform a reset count and then convert the reset count intoone's complement, in other words, a negative value by inverting thereset count.

However, the image sensor 100 according to an example embodiment of theinventive concept is not limited thereto. The image sensor 100 mayfurther include a counting code generator that performs a counting codedepending on the control of the control logic 195. The counting codegenerator may be implemented as a gray code generator, and may generatea plurality of code values having a resolution depending on a set numberof bits as a counting code. For example, the plurality of counters 230may include a latch circuit and an operation circuit, and the latchcircuit may receive the counting code from the counting code generatorand the output signal from the comparator, and may latch the code valueof the counting code when the level of the comparison signaltransitions. The operation circuit may generate an image signal valuefrom which the reset level of the pixel 111 is removed by calculating areset value and the image signal value.

FIG. 4A is a circuit diagram of a comparator 210 a as a comparativeexample, and FIG. 4B is a circuit diagram illustrating a comparator 210b according to an example embodiment of the inventive concept.

Referring to FIG. 4A, the comparator 210 a may include a plurality oftransistors MP11, MP12, MN11, MN12, MN21 a, MN22 a, and MN23 a, and someof the plurality of transistors MN21 a, MN22 a, and MN23 a may beequivalently represented as a current source CSa.

In FIG. 4A, the comparator 210 a may include a first P-type transistorMP11, a second P-type transistor MP12, a first N-type transistor MN11,and a second N-type transistor MN12. In addition, the comparator 210 amay include a third N-type transistor MN21 a, a fourth N-type transistorMN22 a, and a fifth N-type transistor MN23 a between a first node NN anda ground voltage. For example, the third N-type transistor MN21 a, thefourth N-type transistor MN22 a, and the fifth N-type transistor MN23 amay be implemented as the current source CSa. The current source CSa maybe implemented as an NMOS transistor, in other words, an N-type metaloxide semiconductor field effect transistor (MOSFET), and a first end ofthe current source CSa may be connected to the ground voltage, and asecond end of the current source CSa may be connected to the first nodeNN, such that a bias current may be generated.

The first N-type transistor MN11 and the second N-type transistor MN12may receive a differential input, for example, a first input signal INPand a second input signal INN, respectively, and generate a differentialcurrent according to a level difference between the first input signalINP and the second input signal INN. For example, the ramp voltageV_(RAMP) may be received as the first input signal INP, and the pixelsignal PS may be received as the second input signal INN.

When the first input signal INP is equal to the second input signal INN,the same current may flow in the first N-type transistor MN11 and thesecond N-type transistor MN12, and when the first input signal INP isdifferent from the second input signal INN, different currents may flowin the first N-type transistor MN11 and the second N-type transistorMN12. The sum of the amounts of current flowing through the first N-typetransistor MN11 and the second N-type transistor MN12 may be equal tothe bias current.

A first end of the first P-type transistor MP11 may be applied with thepower supply voltage VDD, and a second end of the first P-typetransistor MP11 may be connected to a second output terminal foroutputting a second output signal OUTN. The power supply voltage VDD isapplied to a first end of the second P-type transistor MP12, and a firstoutput terminal for outputting a first output signal OUTP may be formedat a second end of the second P-type transistor MP12. The first outputsignal OUTP and the second output signal OUTN may be determined based oncurrent mirroring of the first P-type transistor MP11 and the secondP-type transistor MP12. The first output signal OUTP and the secondoutput signal OUTN may be determined based on the amount of currentflowing through the first N-type transistor MN11 and the second N-typetransistor MN12. When the level of the first input signal INP is higherthan the level of the second input signal INN, a larger amount ofcurrent flows through the first N-type transistor MN11 compared to thesecond N-type transistor MN12. Accordingly, the level of the firstoutput signal OUTP may increase and the level of the second outputsignal OUTN may decrease.

A first bias voltage V_(BIAS1) may be applied as a bias signal BS ofFIG. 1 to the gate electrode of the third N-type transistor MN21 a, asecond bias voltage V_(BIAS2) may be applied as a bias signal BS to thegate electrode of the fourth N-type transistor MN22 a, and a power-downsignal PDB may be applied to the gate electrode of the fifth N-typetransistor MN23 a. When the first bias voltage V_(BIAS1) and/or thesecond bias voltage V_(BIAS2) is applied, the comparator 210 a mayamplify the pixel signal PS. The first bias voltage V_(BIAS1) and thesecond bias voltage V_(BIAS2) are not supplied to only one comparator210 a, but may be simultaneously supplied to a plurality of comparatorsincluded in the analog-to-digital converting array 130 (shown in FIG.1). The power-down signal PDB is a signal for cutting off power supplyto minimize the power supply when some of the analog-to-digitalconverting arrays 130 (shown in FIG. 1) are not used for sensing. Inthis case, the fifth N-type transistor MN23 a to which the power-downsignal PDB is provided functions as a physical power-down switch.

Since a physical switch is added to the analog-to-digital convertingarray 130, its own on-resistance is induced, and the input range andbias current of the amplifier may be changed. For example, thecomparator 210 a in FIG. 4A adopts a structure of three series-connectedtransistors. As a result, the power-down switch may cause the inputrange of the minimum operating voltage to be limited and theon-resistance distribution to be deteriorated.

Referring to FIG. 4B, the comparator 210 b according to an exampleembodiment of the inventive concept may include a third N-typetransistor MN21 b and a fourth N-type transistor MN22 b functioning as aswitch for receiving a bias voltage, but may not include a fifth N-typetransistor MN23 a (shown in FIG. 4A) functioning as a physicalpower-down switch. The third N-type transistor MN21 b and the fourthN-type transistor MN22 b may be equivalently expressed as a currentsource CSb.

The comparator 210 b according to an example embodiment of the inventiveconcept may cut off power supply when some of the analog-to-digitalconverting array 130 is not used for sensing without a physicalpower-down switch (e.g., the fifth N-type transistor MN23 a) by applyingthe bias voltage separately depending on the operation mode. A method ofseparately applying the bias voltage in conformity with the operationmode will be described in detail below with reference to FIG. 5A.

FIGS. 5A to 5C are schematic diagrams illustrating a plurality of metallines 211, 212, and 213, the bias generator 140, and a bias controller151, 152, and 153 according to an example embodiment of the inventiveconcept.

Referring to FIG. 5A together with FIGS. 1 and 3, a first metal line ML1and a second metal line ML2 included in the ADC 131 may be referred toas a plurality of metal lines 211. According to an example embodiment ofthe inventive concept, the plurality of metal lines 211 may be disposedbelow or above the comparator 210 (shown FIG. 3) and receive a biasvoltage V_(BIAS). For example, the bias voltage V_(BIAS) may include afirst bias voltage V_(BIAS1) and a second bias voltage V_(BIAS2) havingdifferent levels.

According to an example embodiment of the inventive concept, theplurality of metal lines 211 may be provided for an operation modesupported by the image sensor 100 (shown in FIG. 1). The operation modeof the image sensor 100 may include a full resolution mode, a crop mode,a binning mode, a power saving mode (e.g., power down), and the like,and may vary depending on an imaging scenario. For example, in the cropmode, the first metal line ML1 may provide a bias voltage V_(BIAS) tosome of the plurality of comparators 210 included in theanalog-to-digital converting array 130. In addition, the second metalline ML2 may not provide the bias voltage V_(BIAS) to the remaining onesof the plurality of comparators 210 included in the analog-to-digitalconverting array 130. The remaining ones of the plurality of comparators210 to which the bias voltage V_(BIAS) is not provided may be includedin the ADC 131 corresponding to the column line COL (shown in FIG. 1) ofthe pixel array 100 (shown in FIG. 1) that is not sensed in the cropmode. Because the bias voltage V_(BIAS) is not applied to the comparator210 corresponding to the unsensed region, power consumption of the imagesensor 100 may be minimized.

According to an example embodiment of the inventive concept, the biascontroller 151 may further include a first transistor TR1 a, a secondtransistor TR2 a, and a first switch SW1 a. The first transistor TR1 aand the second transistor TR2 a may determine the path of the biasvoltage V_(BIAS) provided to the plurality of metal lines 211. Accordingto an example embodiment of the inventive concept, whether the firstmetal line MLA and/or the second metal line ML2 is activated by turningon-off of the first transistor TR1 a and/or the second transistor TR2 amay be determined. For example, when the first transistor TR1 a isturned on, a ground voltage may be applied to the first metal line ML1.In this case, no voltage is applied to the first metal line ML1, so thatthe first metal line ML1 may be deactivated. For example, when thesecond transistor TR2 a is turned on, a ground voltage may be applied tothe second metal line ML2. In this case, no voltage is applied to thesecond metal line ML2, so that the second metal line ML2 may bedeactivated.

According to an example embodiment of the inventive concept, a firstcontrol signal CS1 may be provided to the gate electrode of the firsttransistor TR1, and a second control signal CS2 may be provided to thegate electrode of the second transistor TR2. Whether the firsttransistor TR1 a and the second transistor TR2 a are activated may bedetermined depending on the logic levels (e.g., logic high or logic low)of the first control signal CS1 and the second control signal CS2.Activation of the first and second transistors TR1 a and TR2 a may meanturning on/off the first and second transistors TR1 a and TR2 a.

According to an example embodiment of the inventive concept, the firsttransistor TR1 a may determine whether to apply the bias voltageV_(BIAS) to all of the plurality of metal lines 211. The secondtransistor TR2 a may determine whether to apply the bias voltageV_(BIAS) to the second metal line ML2 among the plurality of metal lines211.

According to an example embodiment of the inventive concept, the firstswitch SW1 a may be included between the first transistor TR1 a and thesecond transistor TR2 a. The first switch SW1 a may be controlled by afirst switch signal SS1 a. The first switch SW1 a may block theapplication of the ground power to the second metal line ML2 when thefirst transistor TR1 a is switched on, or block the application of theground power to the first metal line ML1 when the second transistor TR2a is switched on.

In an example embodiment of the inventive concept, for variousoperations of the image sensor 100 (shown in FIG. 1), it is shown thatboth the first bias voltage V_(BIAS1) and the second bias voltageV_(BIAS2) are applied to the comparator 210 a as a bias signal BS (shownin FIG. 1), but the inventive concept is not limited thereto. Thecomparator 210 a may receive one bias voltage V_(BIAS1) through onetransistor, for example, the third N-type transistor MN21 a, or receivethree or more bias voltages through three or more transistors.

The analog-to-digital converting array 130 and/or the image sensor 100including the analog-to-digital converting array 130 according to anexample embodiment of the inventive concept may reduce the number ofphysical switches by separately applying the bias voltage depending onan operation mode. Accordingly, the analog-to-digital converting array130 and the image sensor 100 may reduce noise (e.g., CFPN, or thermalnoise) caused by the physical switch, minimize an increase inresistance, and stabilize the input range of the comparator 210.

In addition, because the analog-to-digital converting array 130 and/orthe image sensor 100 including the analog-to-digital converting array130 according to an example embodiment of the inventive concept mayreduce noise by reducing the number of physical switches, a low-powercircuit design may be easily achieved even though the input voltage isgradually reduced to realize low power.

In addition, the analog-to-digital converting array 130 and/or the imagesensor 100 including the analog-to-digital converting array 130according to an example embodiment of the inventive concept may increasespace efficiency in terms of circuit layout design by reducing thenumber of physical switches.

Referring to FIG. 5B together with FIGS. 1 and 3, the bias controller152 further includes a first transistor TR1 b, a second transistor TR2 band a second switch SW2 b, and a third transistor TR3 b and a thirdswitch SW3 b. In addition, since the image sensor 100 supports variousmodes, such as a binning mode, a plurality of metal lines 212 mayfurther include a third metal line ML3 in addition to the first metalline ML1 and the second metal line ML2. In FIGS. 5A and 5B, theplurality of metal lines 211 and 212 are illustrated as including two orthree metal lines ML1, ML2, and ML3 for simplicity of explanation, butthe inventive concept is not limited thereto. By using various numbersof metal lines in combination, it is possible to inactivate metal linesthat are not sensed or processed for each operation mode.

Since the plurality of metal lines 212 includes three metal lines ML1 toML3 in FIG. 5B, an extra transistor may be added compared to FIG. 5A.According to an example embodiment of the inventive concept, the firsttransistor TR1 b may be connected to a common node of the first metalline ML1 and the bias generator 140, and may be controlled by the firstcontrol signal CS1. The second transistor TR2 b may be connected to thesecond metal line ML2 and may be controlled by the second control signalCS2. The third transistor TR3 b may be connected to the third metal lineML3 and may be controlled by a third control signal CS3.

The second switch SW2 b may be connected between the common node of thefirst metal line ML, and the bias generator 140 and a common node of thesecond transistor TR2 b and the second metal line ML2 and be controlledby a second switch signal SS2 b. The third switch SW3 b may be connectedbetween the common node of the first metal line ML1 and the biasgenerator 140 and a common node of the third transistor TR3 b and thethird metal line ML3 and be controlled by a third switch signal SS3 b.

According to an example embodiment of the inventive concept, the firsttransistor TR1 b may determine whether to apply a bias voltage V_(BIAS)to all of the plurality of metal lines 212. The second transistor TR2 bmay determine whether to apply the bias voltage V_(BIAS) to the secondmetal line ML2 among the plurality of metal lines 212. The thirdtransistor TR3 b may determine whether to apply the bias voltageV_(BIAS) to the second metal line MU among the plurality of metal lines212.

The second switch SW2 b may block the application of the ground power tothe second metal line ML2 when the first transistor TR1 b is switchedon, or block application of the ground power to the first metal line ML1or the third metal line ML3 when the second transistor TR2 b is switchedon. The third switch SW3 b may block the application of the ground powerto the third metal line ML3 when the first transistor TR1 b is switchedon, or block the application of the ground power to the first metal lineML1 or the second metal line ML2 when the third transistor TR3 b isswitched on.

Referring to FIG. 5C together with FIGS. 1 and 3, the bias controller153 may further include a first transistor TR1 c, a second transistorTR2 c, a third transistor TR3 c, a fourth switch SW1 c, and a fifthswitch SW3 c. A plurality of metal lines 213 may include a first metalline ML1 and a second metal line ML2.

According to an example embodiment of the inventive concept, the firsttransistor TR1 c may be connected to a common node of the first metalline ML1 and the bias generator 140, and may be controlled by a firstcontrol signal CS1. The second transistor TR2 c may be connected to thesecond metal line ML2 and may be controlled by a second control signalCS2. The third transistor TR3 c may be connected to the first metal lineML1 and may be controlled by a third control signal CS3.

The fourth switch SW1 c may be connected between the common node of thefirst metal line MLA and the bias generator 140 and a common node of thesecond transistor TR2 c and the second metal line ML2 and may becontrolled by a fourth switch signal SS1 c. The fifth switch SW3 c maybe connected between the common node of the first metal line ML1 and thebias generator 140 and a common node of the third transistor TR3 c andthe first metal line ML1, and may be controlled by a fifth switch signalSS3 c.

According to an example embodiment of the inventive concept, the firsttransistor TR1 c may determine whether to apply a bias voltage V_(BIAS)to all of the plurality of metal lines 212. The second transistor TR2 cmay determine whether to apply the bias voltage V_(BIAS) to the secondmetal line ML2 among the plurality of metal lines 212. The thirdtransistor TR3 c may determine whether to apply the bias voltageV_(BIAS) to the first metal line ML among the plurality of metal lines212.

The fourth switch SW1 c may block the application of the ground power tothe second metal line ML2 when the first transistor TR1 c is switchedon, or block the application of the ground power to the first metal lineML1 when the second transistor TR2 c is switched on. The fifth switchSW3 c may block the application of the ground power to the first metalline ML1 when the first transistor TR1 c is switched on, or block theapplication of the ground power to the second metal line ML2 when thethird transistor TR3 c is switched on.

According to an example embodiment of the inventive concept, each of atleast two metal lines, for example, the first metal line ML1 and thesecond metal line ML2, included in the plurality of metal lines 213 mayinclude a transistor, for example, the second transistor TR2 c or thethird transistor TR3 c, and a switch, for example, the fourth switch SW1c or the fifth switch SW3 c. Accordingly, the image sensor 100 (shown inFIG. 1) operating in the crop mode may selectively activate thecomparators 210 (shown FIG. 3) required for the crop mode.

FIGS. 6A to 6C are diagrams schematically illustrating a plurality ofmetal lines 211, a bias generator 140, and a plurality of transistorsTR1 and TR2 according to an example embodiment of the inventive concept.FIGS. 1 and 5A are referred to together with FIGS. 6A to 6C.

In the present embodiment, for convenience of description, it is assumedthat both the first transistor TR1 and the second transistor TR2 areN-type MOSFETs. Accordingly, the first and second control signals CS1and CS2 of the first and second transistors TR1 and TR2 are describedbased on an N-type MOSFET. However, the inventive concept is not limitedthereto, and thus, the inventive concept does not exclude a case inwhich the first transistor TR1 and the second transistor TR2 are P-typeMOSFETs. In this case, the logic levels of the first and second controlsignals CS1 and CS2 of the first and second transistors may TR1 and TR2have opposite phases.

Referring to FIG. 6A, the first control signal CSI may be applied logiclow L. In this case, a channel of the first transistor TR1 is not formedand the first transistor TR1 is deactivated. As a result, the groundvoltage connected to one end of the first transistor TR1 is not providedto the other end of the first transistor TR1.

The second control signal CS2 may be applied as logic low L. In thiscase, the channel of the first transistor TR1 is not formed, and thesecond transistor TR2 is deactivated. Accordingly, the ground voltageconnected to one end of the second transistor TR2 is not provided to theother end of the second transistor TR2.

The first switch signal SS1 may be applied logic high H, and a firstswitch SW1 may be shorted.

As a result, the bias voltage V_(BIAS) generated by the bias generator140 may be provided to both the first metal line ML1 and the secondmetal line ML2. The first metal line ML1 may provide the bias voltageV_(BIAS) to some of the plurality of comparators 210 and the secondmetal line ML2 may provide the bias voltage V_(BIAS) to the remainingones of the plurality of comparators 210. In other words, the firstmetal line ML1 may provide the bias voltage V_(BIAS) to a first portionof the plurality of comparators 210, and the second metal line ML2 mayprovide the bias voltage V_(BIAS) to a second portion of the pluralityof comparators 210. As a result, the bias voltage may be provided to allcomparators 210 (e.g., activation). A case in which the bias voltageV_(BIAS) is applied to all the comparators 210 may correspond to a fullresolution mode.

Referring to FIG. 6B, the first control signal CSI may be applied aslogic low L. In this case, the channel of the first transistor TR1 isnot formed, and the first transistor TR1 is deactivated, and thus, theground voltage connected to one end of the first transistor TR1 is notprovided to the other end of the first transistor TR1.

The second control signal CS2 may be applied as logic high H. In thiscase, the channel of the second transistor TR2 may be formed and thesecond transistor TR2 is turned on. Accordingly, the ground voltageconnected to one end of the second transistor TR2 is provided to theother end of the second transistor TR2. In this case, the ground voltagemay be applied to the second metal line ML2 to inactivate the secondmetal line ML2.

The first switch signal SS1 may be applied logic low L, and the firstswitch SW1 may be opened to block the ground voltage from being providedto the first metal line ML1.

As a result, the bias voltage V_(BIAS) generated by the bias generator140 may be provided to the first metal line ML1. The first metal lineML1 may provide a bias voltage V_(BIAS) to some of the plurality ofcomparators 210, and the second metal line ML2 may not provide the biasvoltage V_(BIAS) to the remaining ones of the plurality of comparators210. Accordingly, only some of the plurality of comparators 210 mayperform an analog-to-digital converting operation. A case in which thebias voltage V_(BIAS) is applied only to some of the plurality ofcomparators 210 may correspond to a crop mode.

Referring to FIG. 6C, the first control signal CSI may be applied aslogic high H, a channel of the first transistor TR1 is formed, and thefirst transistor TR1 is activated. Accordingly, the ground voltageconnected to one end of the first transistor TR1 is provided to theother end of the first transistor TR1.

The second control signal CS2 may be applied as logic high H. In thiscase, the channel of the second transistor TR2 is formed, and the secondtransistor TR2 is activated. Accordingly, the ground voltage connectedto one end of the second transistor TR2 is provided to the other end ofthe second transistor TR2. Accordingly, the ground voltage may beapplied to the second metal line ML2 to inactivate the second metal lineML2.

In this case, the first switch signal SS1 may be applied logic high H orlogic low L (D: Don't care). Because, if the first switch SW1 is opened,the ground voltage may be provided to the first metal line ML1 throughthe first transistor TR1 and the ground voltage may be provided to thesecond metal line ML2 through the second transistor TR2, and conversely,if the first switch SW1 is short-circuited, the ground voltage may beprovided to both the first metal line ML1 and the second metal line ML2through the first transistor TR1. As a result, when the second controlsignal CS2 is the logic low L, the logic level of the first switchsignal SS1 is irrelevant (D).

Using a similar logic, in a case where the first control signal CS1 isapplied as logic high H, when the first switch signal SS1 is applied aslogic high H, the logic level of the second control signal CS2 isirrelevant (D). For example, when the second control signal CS2 is thelogic low L, the ground voltage may be provided to the second metal lineML2 through the short-circuited first switch SW1, since the firsttransistor TR1 is activated. In addition, when the second control signalCS2 is the logic high H, the ground voltage may be provided to thesecond metal line ML2 through the short-circuited first switch SW1 sincethe first transistor TR1 is activated, or the ground voltage may bedirectly provided to the second metal line ML2 since the secondtransistor TR2 is activated.

A case in which all of the plurality of comparators 210 are deactivatedby applying the ground voltage to all of the plurality of metal lines211 without the bias voltage V_(BIAS) may correspond to a power savingmode.

FIG. 6D is a table showing signal levels depending on operation modes ofthe ADC 131 according to an example embodiment of the inventive concept.

Referring to FIG. 6D together with FIGS. 6A to 6C, in order to supportthe full resolution mode FULL of the ADC 131, both of the first controlsignal CS1, and the second control signal CS2 need to be applied aslogic low L, and the first switch signal SS1 needs to be applied aslogic high H. As a result, the bias voltage V_(BIAS) may be applied tothe first metal line ML1 and the second metal line ML2.

In order to support the crop mode CROP of the ADC 131, both the firstcontrol signal CS1 and the first switch signal SS1 need to be applied aslogic low L, and the second control signal CS2 needs to be applied aslogic high H. As a result, the bias voltage V_(BIAS) may be applied tothe first metal line ML1 and the ground voltage V_(SS) may be applied tothe second metal line ML2.

In order to support the power saving mode PWROFF of the ADC 131, atleast two of the first control signal CS1, the second control signalCS2, and the first switch signal SS1 are required to be logic high H.For example, when the first control signal CS1 and the second controlsignal CS2 are applied as logic high H, the first switch signal SS1 isindependent of the logic level of the applied voltage (D). For example,when the first control signal CS) and the first switch signal SS1 areapplied as logic high H, the second control signal CS2 is independent ofthe logic level of the applied voltage (D). For example, when the secondcontrol signal CS2 and the first switch signal SS1 are applied as logichigh H, the first control signal CS1 is independent of the logic levelof the applied voltage (D). As a result, the ground voltage V_(SS) maybe applied to both the first metal line ML1 and the second metal lineML2. As described above, when the first transistor TR1 and the secondtransistor TR2 are P-type MOSFETs, the logic levels of the controlsignals CS1 and CS2 of the transistors TR1 and TR2 may be opposite inphase.

FIG. 7A is a diagram illustrating a pixel array depending on a crop modeaccording to an example embodiment of the inventive concept.

Referring to FIG. 7A, a pixel array 110 may sequentially read aplurality of rows corresponding to the crop area CROP AREA among theplurality of rows ROW1 to ROW (N+1).

The operation mode of the image sensor 100 (shown FIG. 1) according toan example embodiment of the inventive concept may be determined by anexternal controller (e.g., an application processor). For example, thecrop area CROP AREA may be set as a target area by an externalapplication processor.

The crop area CROP AREA may include an M-th row to an N-th row (crop rowarea). In an example embodiment of the inventive concept, the pixelarray 110 may skip the remaining rows except for the crop area CROPAREA, and sequentially read the M-th row ROW(M) to the N-th row ROW(N).The pixel signal PS read out for each row may be output in a columndirection of the pixel array 110.

Depending on the control of the application processor for the crop areaCROP AREA, location information of the pixel 111 with respect to thecrop area CROP AREA, in other words, location information of the columnline COL may also be provided. For example, under the control of theapplication processor, the column decoder 170 (shown in FIG. 1) mayselect only a column corresponding to the crop area CROP AREA (e.g.,crop column area), and an analog-to-digital conversion operation may beperformed only on the column corresponding to the crop area CROP AREA.In this case, among the metal lines included in the comparator 210(shown in FIG. 3), only metal lines corresponding to the crop area CROPAREA may be activated, and metal lines not included in the crop areaCROP AREA may be deactivated.

FIG. 7B is a diagram for explaining image processing according to anexample embodiment of the inventive concept.

The read-out pixel is illustrated as four sub-pixels in which red,green, and blue are arranged in the order of R-G-B-G in a clockwisedirection from the upper left. In all the drawings of FIG. 7B, the foursub-pixels arranged in the order of R-G-B-G in a clockwise directionfrom the upper left indicate that colors are expressed by a combinationof R-G-B light when output to a display unit, and the actualimplementation of the pixel array 110 of the image sensor 100 does notmean that the pixel array 110 consists of four sub-pixels.

A first image IMG1 corresponds to a result of the image sensor 100capturing the object in the full resolution mode, and a second imageIMG2 corresponds to a result of the image sensor 100 capturing theobject in the crop mode. According to an example embodiment of theinventive concept, among the plurality of comparators 210 included inthe analog-to-digital converting array 130, a bias voltage may not beprovided to the comparator 210 that is not included in the crop area.Accordingly, power consumed by the comparator 210 on which theanalog-to-digital conversion operation is not performed may be reduced.

FIG. 8 is a block diagram of an electronic device including amulti-camera module according to an example embodiment of the inventiveconcept, and FIG. 9 is a detailed block diagram of the camera module ofFIG. 8 according to an example embodiment of the inventive concept.

Referring to FIG. 8, an electronic device 1000 may include a cameramodule group 1100, an application processor 1200, a power managementintegrated circuit (PMIC) 1300, and an external memory 1400.

The camera module group 1100 may include a plurality of camera modules1100 a, 1100 b, and 1100 c. Although FIG. 8 shows an embodiment in whichthree camera modules 1100 a, 1100 b, and 1100 c are disposed, theinventive concept is not limited thereto. In some embodiments of theinventive concept, the camera module group 1100 may be modified toinclude only two camera modules. In addition, in some embodiments of theinventive concept, the camera module group 1100 may be modified toinclude n (n is a natural number greater than or equal to 4) cameramodules.

Hereinafter, a configuration of the camera module 1100 b will bedescribed in more detail with reference to FIG. 9, but the followingdescription may be equally applied to the other camera modules 1100 aand 1100 b.

Referring to FIG. 9, the camera module 1100 b may include a prism 1105,an optical path folding element (hereinafter, “OPFE”) 1110, an actuator1130, an image sensing device 1140, and a storage unit 1150.

The prism 1105 may include a reflective surface 1107 of a lightreflective material to modify the path of light L incident from theoutside.

In some embodiments of the inventive concept, the prism 1105 may changethe path of the light L incident in a first direction X to a seconddirection Y perpendicular to the first direction X. In addition, theprism 1105 may change the path of the light L incident in the firstdirection X to the second direction Y perpendicular to the firstdirection X by rotating the reflective surface 1107 of the lightreflective material in the A direction about a central axis 1106 or byrotating the central axis 1106 in the B direction. In this case, theOPFE 1110 may also move in a third direction Z perpendicular to thefirst direction X and the second direction Y.

In some embodiments of the inventive concept, as shown, the maximumrotation angle of the prism 1105 in the A direction may be 15 degrees orless in the positive (+) A direction and greater than 15 degrees in thenegative (−) A direction, but the inventive concept is not limitedthereto.

In some embodiments of the inventive concept, the prism 1105 may bemoved in the positive (+) or negative (−) B direction around 20 degrees,or between 10 degrees and 20 degrees, or between 15 degrees and 20degrees. Here, the moving angle may be moved at the same angle in theplus (+) or minus (−) direction B, or may move up to an almost similarangle within a range of about 1 degree.

In some embodiments of the inventive concept, the prism 1105 may movethe reflective surface 1107 of the light reflective material in a thirddirection, for example, the Z direction, parallel to the extensiondirection of the central axis 1106.

The OPFE 1110 may include, for example, an optical lens consisting of m(here, m is a natural number) number of groups. The m lenses may move inthe second direction Y to change an optical zoom ratio of the cameramodule 1100 b. For example, assuming that the basic optical zoom ratioof the camera module 1100 b is Z, when the m optical lenses included inthe OPFE 1110 are moved, the optical zoom ratio of the camera module1100 b may be changed to an optical zoom ratio of 3Z or 5Z, or 5Z ormore.

The actuator 1130 may move the OPFE 1110 or an optical lens(hereinafter, referred to as an optical lens) to a specific position.For example, the actuator 1130 may adjust the position of the opticallens so that an image sensor 1142 is located at a focal length of theoptical lens for accurate sensing.

The image sensing device 1140 may include the image sensor 1142, acontrol logic 1144, and a memory 1146. The image sensor 1142 may sensean image of a sensing target using light L provided through an opticallens. The control logic 1144 may control the overall operation of thecamera module 1100 b. For example, the control logic 1144 may controlthe operation of the camera module 1100 b depending on a control signalprovided through a control signal line CSLb.

The memory 1146 may store information necessary for the operation of thecamera module 1100 b, such as calibration data 1147. The calibrationdata 1147 may include information necessary for the camera module 1100 bto generate image data using the light L provided from the outside. Thecalibration data 1147 may include, for example, information about adegree of rotation, information about a focal length, and informationabout an optical axis, described above. When the camera module 1100 b isimplemented in the form of a multi-state camera in which the focallength is changed depending on the position of the optical lens, thecalibration data 1147 may include a focal length value for each position(or state) of the optical lens and information related to auto focusing.

The storage unit 1150 may store image data sensed by the image sensor1142. The storage unit 1150 may be disposed outside the image sensingdevice 1140, and may be implemented in a stacked form on a sensor chipconstituting the image sensing device 1140. In some embodiments of theinventive concept, the storage unit 1150 may be implemented as anelectrically erasable programmable read-only memory (EEPROM), but theinventive concept is not limited thereto.

Referring to FIGS. 8 and 9 together, in some embodiments of theinventive concept, each of the plurality of camera modules 1100 a, 1100b, and 1100 c may include the actuator 1130. Accordingly, each of theplurality of camera modules 1100 a, 1100 b, and 1100 c may include thesame or different calibration data 1147 depending on the operation ofthe actuator 1130 included therein.

In some embodiments of the inventive concept, one camera module (e.g.,1100 b) among the plurality of camera modules 1100 a, 1100 b, and 1100 cmay be a folded lens type camera module including the prism 1105 and theOPFE 1110 described above, and the remaining camera modules (e.g., 1100a and 1100 b) may be a vertical type camera module that does not includethe prism 1105 and the OPFE 1110, but the inventive concept is notlimited thereto.

In some embodiments of the inventive concept, one camera module (e.g.,1100 c) among the plurality of camera modules 1100 a, 1100 b, and 1100 cmay be, for example, a vertical type depth camera for extracting depthinformation using infrared (IR) rays. In this case, the applicationprocessor 1200 may generate a three-dimensional (3D) depth image bymerging the image data provided from the depth camera and the image dataprovided from another camera module (e.g., 1100 a or 1100 b).

In some embodiments of the inventive concept, at least two cameramodules (e.g., 1100 a, 1100 b) among the plurality of camera modules1100 a, 1100 b, and 1100 c may have different fields of view from eachother. In this case, for example, optical lenses of at least two cameramodules (e.g., 1100 a, 1100 b) among the plurality of camera modules1100 a, 1100 b, and 1100 c may be different from each other, but theinventive concept is not limited thereto.

Also, in some embodiments of the inventive concept, a viewing angle ofeach of the plurality of camera modules 1100 a, 1100 b, and 1100 c maybe different from each other. In this case, the optical lenses includedin each of the plurality of camera modules 1100 a, 1100 b, and 1100 cmay also be different, but is not limited thereto.

In some embodiments of the inventive concept, each of the plurality ofcamera modules 1100 a, 1100 b, and 1100 c may be disposed to bephysically separated from each other. In other words, an independentimage sensor 1142 may be disposed inside each of the plurality of cameramodules 1100 a, 1100 b, and 1100 c, rather than using the sensing areaof one image sensor 1142 by a plurality of camera modules 1100 a, 1100b, and 1100 c.

Referring back to FIG. 8, the application processor 1200 may include animage processor 1210, a memory controller 1220, and an internal memory1230. The application processor 1200 may be implemented separately fromthe plurality of camera modules 1100 a, 1100 b, and 1100 c. For example,the application processor 1200 and the plurality of camera modules 1100a, 1100 b, and 1100 c may be implemented separately as separatesemiconductor chips.

The image processor 1210 may include a plurality of sub image processors1212 a, 1212 b, and 1212 c, an image generator 1214, and a camera modulecontroller 1216.

The plurality of sub-image processors 1212 a, 1212 b, and 1212 c maycorrespond to the number of the plurality of camera modules 1100 a, 1100b, and 1100 c.

Image data generated from each of the camera modules 1100 a, 1100 b, and1100 c may be provided to the corresponding sub-image processors 1212 a,1212 b, and 1212 c through image signal lines ISLa, ISLb, and ISLcseparated from each other. For example, image data generated from thecamera module 1100 a may be provided to the sub-image processor 1212 athrough the image signal line ISLa, the image data generated from thecamera module 1100 b may be provided to the sub-image processor 1212 bthrough the image signal line ISLb, and the image data generated fromthe camera module 1100 c may be provided to the sub-image processor 1212c through the image signal line ISLc. Such image data transmission maybe performed using, for example, a camera serial interface (CS1) basedon a mobile industry processor interface (MIPI), but the inventiveconcept is not limited thereto.

In some embodiments of the inventive concept, one sub-image processormay be arranged to correspond to a plurality of camera modules. Forexample, the sub-image processor 1212 a and the sub-image processor 1212c may not be implemented separately from each other as shown, but may beimplemented by being integrated into one sub-image processor, and theimage data provided from the camera module 1100 a and the camera module1100 c may be selected through a selection device (e.g., a multiplexer)and then provided to the integrated sub-image processor.

The image data provided to each of the sub-image processors 1212 a, 1212b, and 1212 c may be provided to the image generator 1214. The imagegenerator 1214 may generate an output image using image data providedfrom each of the sub-image processors 1212 a, 1212 b, and 1212 cdepending on image generating (or generation) information or a modesignal.

For example, the image generator 1214 may generate an output image bymerging at least some of the image data generated from the cameramodules 1100 a, 1100 b, and 1100 c having different viewing anglesdepending on the image generation information or the mode signal. Inaddition, the image generator 1214 may generate an output image byselecting any one of image data generated from the camera modules 1100a, 1100 b, and 1100 c having different viewing angles depending on imagegeneration information or a mode signal.

In some embodiments of the inventive concept, the image generationinformation may include a zoom signal or zoom factor. In addition, insome embodiments of the inventive concept, the mode signal may be, forexample, a signal based on a mode selected by a user.

When the image generation information is a zoom signal (e.g., a zoomfactor), and each camera module 1100 a, 1100 b, and 1100 c has adifferent viewing field (e.g., viewing angle) from each other, the imagegenerator 1214 may perform different operations depending on the type ofthe zoom signal. For example, when the zoom signal is the first signal,the image generator 1214 may merge the image data output from the cameramodule 1100 a and the image data output from the camera module 1100 c,and then may generate an output image by using the merged image signaland the image data output from the camera module 1100 b not used formerging. If the zoom signal is a second signal different from the firstsignal, the image generator 1214 may generate an output image byselecting any one of image data output from each of the camera modules1100 a, 1100 b, and 1100 c without performing such image data merging.However, the inventive concept is not limited thereto, and a method ofprocessing image data may be modified and implemented as needed.

In some embodiments of the inventive concept, the image generator 1214may receive a plurality of image data having different exposure timesfrom at least one of the plurality of sub-image processors 1212 a, 1212b, and 1212 c, and perform high dynamic range (HDR) processing on theplurality of image data. Through such processing, the image generator1214 may generate merged image data having an increased dynamic range.

The camera module controller 1216 may provide a control signal to eachof the camera modules 1100 a, 1100 b, and 1100 c. The control signalsgenerated from the camera module controller 1216 may be provided to thecorresponding camera modules 1100 a, 1100 b, and 1100 c through controlsignal lines CSLa, CSLb, and CSLc separated from each other.

Any one of the plurality of camera modules 1100 a, 1100 b, and 1100 cmay be designated as a master camera (e.g., 1100 b) depending on imagegeneration information including a zoom signal or a mode signal, and theremaining camera modules (e.g., 1100 a and 1100 c) may be designated asslave cameras. Such information may be included in the control signaland provided to the corresponding camera modules 1100 a, 1100 b, and1100 c through the control signal lines CSLa, CSLb, and CSLc separatedfrom each other.

A camera module operating as a master and a slave may be changeddepending on a zoom factor or an operation mode signal. For example,when the viewing angle of the camera module 1100 a is wider than that ofthe camera module 1100 b and the zoom factor indicates a low zoom ratio,the camera module 1100 b may operate as a master, and the camera module1100 a may operate as a slave. Conversely, when the zoom factorindicates a high zoom ratio, the camera module 1100 a may operate as amaster and the camera module 1100 b may operate as a slave.

In some embodiments of the inventive concept, the control signalprovided from the camera module controller 1216 to each of the cameramodules 1100 a, 1100 b, and 1100 c may include a sync enable signal. Forexample, when the camera module 1100 b is a master camera and the cameramodules 1100 a and 1100 c are slave cameras, the camera modulecontroller 1216 may transmit a sync enable signal to the camera module1100 b. The camera module 1100 b receiving the sync enable signal maygenerate a sync signal based on the received sync enable signal, and mayprovide the generated sync signal to the camera modules 1100 a and 1100c through a sync signal line SSL. The camera module 1100 b and thecamera modules 1100 a and 1100 c may be synchronized with the syncsignal to transmit image data to the application processor 1200.

In some embodiments of the inventive concept, the control signalprovided from the camera module controller 1216 to the plurality ofcamera modules 1100 a, 1100 b, and 1100 c may include mode informationdepending on the mode signal. Based on the mode information, theplurality of camera modules 1100 a, 1100 b, and 1100 c may operate in afirst operation mode and a second operation mode in relation to thesensing rate.

In the first operation mode, the plurality of camera modules 1100 a,1100 b, and 1100 c may generate an image signal at a first rate, forexample, an image signal at a first frame rate, encode the image signalat a second rate higher than the first rate, for example, the imagesignal at a second frame rate higher than the first frame rate, andtransmit the encoded image signal to the application processor 1200. Inthis case, the second rate may be 30 times or less than the first rate.

The application processor 1200 may store the received image signal, inother words, the encoded image signal, in the memory 1230 providedtherein or the external memory 1400 external to the applicationprocessor 1200, then read and decode the encoded image signal from thememory 1230 or the external memory 1400, and display image datagenerated based on the decoded image signal. For example, acorresponding sub-processor among the plurality of sub-processors 1212a, 1212 b, and 1212 c of the image processor 1210 may perform decoding,and may also perform image processing on the decoded image signal.

In the second operation mode, the plurality of camera modules 1100 a,1100 b, and 1100 c may generate an image signal at a third rate lowerthan the first rate, for example, an image signal at a third frame ratelower than the first frame rate, and transmit the image signal to theapplication processor 1200. The image signal provided to the applicationprocessor 1200 may be an unencoded signal. The application processor1200 may perform image processing on the received image signal or storethe image signal in the memory 1230 or the external memory 1400.

The PMIC 1300 may supply power, for example, a power supply voltage, toeach of the plurality of camera modules 1100 a, 1100 b, and 1100 c. Forexample, the PMIC 1300 may supply a first power to the camera module1100 a through a power signal line PSLa, supply a second power to thecamera module 1100 b through a power signal line PSLb, and supply athird power to the camera module 1100 c through a power signal linePSLc, under the control of the application processor 1200.

The PMIC 1300 may generate power corresponding to each of the pluralityof camera modules 1100 a, 1100 b, and 1100 c in response to a powercontrol signal PCON from the application processor 1200, and also adjustthe power level. The power control signal PCON may include a poweradjustment signal for each operation mode of the plurality of cameramodules 1100 a, 1100 b, and 1100 c. For example, the operation mode mayinclude a low power mode, and in this case, the power control signalPCON may include information about a camera module operating in the lowpower mode and a set power level. The levels of powers provided to eachof the plurality of camera modules 1100 a, 1100 b, and 1100 c may be thesame or different from each other. In addition, the level of power maybe changed dynamically.

While the inventive concept has been particularly shown and describedwith reference to example embodiments thereof, it will be understoodthat various changes in form and details may be made thereto withoutdeparting from the spirit and scope of the inventive concept as setforth in the following claims.

What is claimed is:
 1. An image sensor supporting a full resolution modeand a crop mode, the image sensor comprising: a pixel array including aplurality of pixels configured to generate a pixel signal by sensing anobject; an analog-to-digital converter configured to convert the pixelsignal into a digital signal and including a plurality of metal lines; abias generator configured to apply a bias voltage to the plurality ofmetal lines; and a bias controller configured to determine a paththrough which the bias voltage is applied to the metal line, wherein thebias controller comprises a first transistor configured to activate allof the plurality of metal lines based on a first control signal; and asecond transistor configured to activate a first metal line for the cropmode among the plurality of metal lines based on a second controlsignal.
 2. The image sensor of claim 1, further comprising: a firstswitch between the first transistor and the second transistor.
 3. Theimage sensor of claim 2, wherein the full resolution mode corresponds toan inactive state of the first transistor and the second transistor, anda short circuit state of the first switch.
 4. The image sensor of claim2, wherein the crop mode corresponds to an inactive state of the firsttransistor, an active state of the second transistor, and an open stateof the first switch.
 5. The image sensor of claim 2, wherein the imagesensor further supports a power saving mode, wherein the power savingmode is an active state of the first transistor, and corresponds toeither an active state of the second transistor or a short circuit stateof the first switch.
 6. The image sensor of claim 1, wherein the firsttransistor and the second transistor include N-type metal oxidesemiconductor field effect transistors (MOSFETs).
 7. The image sensor ofclaim 1, wherein, in the full resolution mode, both the first controlsignal and the second control signal are at a first logic level.
 8. Theimage sensor of claim 1, wherein, in the crop mode, the first controlsignal is at a first logic level, and the second control signal is at asecond logic level that is opposite in phase to the first logic level.9. The image sensor of claim 1, wherein, in the full resolution mode,the bias voltage is applied to all of the plurality of metal lines. 10.The image sensor of claim 1, wherein, in the crop mode, the bias voltageis provided to the first metal line, and a ground voltage is provided tothe rest of metal lines except the first metal line among the pluralityof metal lines.
 11. The image sensor of claim 1, wherein the imagesensor further supports a power saving mode, wherein, in the powersaving mode, a ground voltage is applied to all of the plurality ofmetal lines.
 12. An analog-to-digital converter configured to convert apixel signal sensed at a pixel into a digital signal, theanalog-to-digital converter comprising: a comparator including a firstmetal line and a second metal line that are activated depending on abias voltage, the comparator being configured to generate a comparisonsignal by comparing the pixel signal with a ramp signal based on thebias voltage; a counter configured to generate a digital signal bycounting the comparison signal based on a clock signal; and a firsttransistor and a second transistor configured to determine a path of thebias voltage applied to the first metal line and the second metal line.13. The analog-to-digital converter of claim 12, wherein the firsttransistor is configured to determine whether the bias voltage isapplied to the first metal line and the second metal line.
 14. Theanalog-to-digital converter of claim 12, wherein the analog-to-digitalconverter is configured to support a crop mode for activating at leastone of the first metal line and the second metal line, and the firsttransistor is configured to determine whether the bias voltage isapplied to the first metal line for the crop mode.
 15. Theanalog-to-digital converter of claim 14, wherein, in the crop mode, afirst control signal for controlling the first transistor is at a firstlogic level, and a second control signal for controlling the secondtransistor is at a second logic level that is opposite in phase to thefirst logic level.
 16. The analog-to-digital converter of claim 12,further comprising: a first switch between the first transistor and thesecond transistor.
 17. The analog-to-digital converter of claim 16,wherein the analog-to-digital converter supports a crop mode foractivating at least one of the first metal line and the second metalline, and the crop mode corresponds to an inactive state of the firsttransistor, an active state of the second transistor, and an open stateof the first switch.
 18. The analog-to-digital converter of claim 16,wherein the analog-to-digital converter supports a power saving mode fordeactivating the first metal line and the second metal line, and thepower saving mode corresponds to any two states of an active state ofthe first transistor, an active state of the second transistor, and ashort circuit state of the first switch.
 19. The analog-to-digitalconverter of claim 12, wherein the analog-to-digital converter supportsa crop mode for activating at least one of the first metal line and thesecond metal line, and in the crop mode, the bias voltage is provided tothe first metal line, and a ground voltage is provided to the secondmetal line.
 20. An image sensor supporting a full resolution mode and acrop mode, the image sensor comprising: a pixel array including aplurality of pixels configured to generate a pixel signal by sensing anobject; an analog-to-digital converting array including a plurality ofanalog-to-digital converters each configured to convert the pixel signalinto a digital signal, the analog-to-digital converting array includinga plurality of metal lines commonly connected to the plurality ofanalog-to-digital converters; a bias generator configured to apply abias voltage to the plurality of metal lines; and a bias controllerconfigured to determine a path through which the bias voltage is appliedto the metal lines, wherein the bias controller comprises a firsttransistor configured to activate all of the plurality of metal linesbased on a first control signal; a second transistor configured toactivate a first metal line for the crop mode among the plurality ofmetal lines based on a second control signal; and an output bufferconfigured to output the digital signal.